Apr. 12, 2016
Leti, an Institute of CEA Tech, will present six papers, including an invited one on “Universal Signatures from Non-Universal Memories: Clues for the Future…”, during the 2016 International Memory Workshop, May 15-18, at the Paris Marriott Rive Gauche Hotel.
In addition, Leti will host a workshop from 6-8 p.m. on Sunday, May 15, to highlight its latest achievements in the field of back-end memories, including the new Memory Advanced Demonstrator (MAD). This test vehicle is dedicated to advanced non-volatile memories, bringing both versatility and robustness for material and interface assessment, and allowing in-depth exploration of memory performances from technology and design perspectives. The workshop will conclude with the outlook for neuromorphic architectures, from neurons to deep neural networks.
The workshop for invited guests will be at the Paris Marriott Rive Gauche Hotel and feature five short presentations, followed by a wine and cheese reception:
1. Leti, from technologies to applications, by Jean-Eric Michallet, vice president of sales and marketing
2. Overview of memory activity in Leti, by Luca Perniola, head of the Memory Component Laboratory
3. Material screening and process capabilities, by Anne Roule, research engineer for advanced memory materials development
4. Memory design and application, from MAD to neuromorphic, by Fabien Clermidy, head of the silicon integration in the Digital Architectures Laboratory
5. Path to the future: neuromorphic architecture, by Christian Gamrat, chief scientist and CEA fellow in the field of advanced embedded computing architectures and nanocomputing at CEA List
The papers are:
Monday, May 16
10:20 a.m. (Session 1) - Invited paper by Luca Perniola, Leti, “Universal Signatures from Non-Universal Memories: Clues for the Future…”
2:25 p.m. (Session 2) - M. Azzaz, STMicroelectronics/Leti, "Endurance/Retention Trade Off in HfOx and TaOx Based RRAM"
2:50 pm (Session 2) - G. Piccolboni, Leti, “Vertical CBRAM (V-CBRAM): From Experimental Data to Design Perspectives”
Tuesday, May 17
10:55 a.m. (Session 4) - G. Navarro, Leti, “N-doping Impact in Optimized Ge-rich Materials Based Phase-Change Memory”
11:20 a.m. (Session 4) - N. Castellani, Leti, “Comparative Analysis of Program/Read Disturb Robustness for GeSbTe-Based Phase-Change Memory Devices”
11:45 am (Session 4) - J. Kluge, STMicroelectronics/Leti, “High Operating Temperature Reliability of Optimized Ge-rich GST Wall PCM Devices”
Gabriel Molas of Leti is finance chair for the 2016 International Memory Workshop.